This work investigates the vacuum ultraviolet (VUV) emission from various feed gases producing plasmas in an electron cyclotron resonance etcher. Absolute measurements of plasma VUV emission at typical pressures for processing between 0.5 and 5 mTorr, and microwave powers between 700 and 1300 W, show levels of irradiance at the wafer position of the order of tenths of mW/cm2 and integrated photon fluxes in the 1014 photons/cm2 s range. The reported level of VUV emission is sufficient to induce radiation damage in typical metal–oxide–semiconductor devices in the form of flatband voltage shift and inversion of lightly doped substrates.
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Cismaru et al. (1999) studied this question.
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