Trap generation at Si/SiO2 interface in submicrometer metal-oxide-semiconductor transistors by 4.9 eV ultraviolet irradiation

Subfemtofarad changes are reported in the gate-to-drain capacitance of submicrometer metal-oxide-semiconductor transistors subjected to 4.9 eV (253.7 nm) ultraviolet irradiation. The observation is attributed to trap generation at Si/SiO2 interface, proposed to be due to the breaking of Si—H bonds.