Work Function Tuning of Ti[sub x]Si[sub y]N[sub z] Electrodes Using Partial Saturation of Chemisorbing Surface during Pulsing Chemical Vapor Deposition

In this article, the achievement of metal gates with tunable work function is demonstrated using partial saturation during pulsing chemical vapor deposition. Thin films were deposited on using a pulse sequence with tetrakisdimethyl amido titanium, , and precursors. By adjusting the silane pulse, the chemisorption kinetics of silane on the surface is finely tuned to control the composition of layers. Their effective work functions were measured in metal-oxide-semiconductor capacitors. Results indicate that the effective work function can be accurately monitored in the range of 4.35–4.60 eV by adjusting the silane pulse time.