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The impact of aluminum (Al) implantation into TiN/SiO2on the effective work function (EWF) of poly-Si/ TiN/SiO2is investigated. Al implanted at 5 keV with a dose of 5 times 1015cm-2reduces the flatband voltage (VFB) and the EWF of poly-Si/TiN/SiO2stack by ~150 mV compared with the unimplanted poly-Si/TiN/SiO2stack. This reduction of VFBis found to be dose-dependent, which is correlated to the Al concentration at the TiN-SiO2interface as evidenced by secondary-ion-mass-spectrometry profiles. The interface dipole created due to the Al presence at the metal-dielectric interface is believed to contribute to the observed VFB(or EWF) reduction (or increase). This technique for EWF modulation is promising for further threshold-voltage (Vt) tuning without any process complexities and is quite significant for planar and multiple gate field-effect transistors on fully depleted silicon on insulator.
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Singanamalla et al. (2007) studied this question.
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