Depth profiling of the oxygen concentration of indium tin oxide (ITO) films on glass substrates has been investigated using a high-energy ion beam. Hot-cathode Penning-discharge sputtering (HC-PDS) in the mixed gases of argon and oxygen was applied to fabricate the films. It is found that there is a correlation between the depth profile of oxygen concentration and the electrical properties. The effect of partial pressures of oxygen gas on the depth profile of the oxygen concentration and on electrical properties is discussed.
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Honda et al. (1994) studied this question.
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