Electrical Characteristics of Al₂ O₃/TiO₂/Al₂O₃ Nanolaminate MOS Capacitor on p-GaN With Post Metallization Annealing and (NH₄)₂SX Treatments

In this letter, electrical characteristics of nanolaminate Al2O3/TiO2/Al2O3onp-GaN MOS capacitor with and without PMA and (NH4)2SXtreatments were investigated. I-V and C-V characteristics were improved by both PMA and (NH4)2SXtreatments. The leakage-current densities can be improved to 3.0 × 10-8and 2.2 × 10-8A/cm2at ±1 V, respectively. Almost an ideal C-V curve, the effective dielectric constant of 12.1 and the averaged Ditvalue of 4.3 × 1011eV-1· cm-2were obtained.