The dominating conduction mechanisms through TiN/Zr1−xAlxO2/TiN capacitors have been investigated over a wide temperature range (25 K to 430 K) in order to obtain information about the traps which cause the current transport. Single positive charged oxygen vacancies are the principal transport sites which participate in all mechanisms observed. However, the conduction mostly defined by intrinsic traps could also be strongly influenced by defects originating from undesirable high-k/metal gate interface reactions which could act as real traps or as transport sites.
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Paskaleva et al. (2011) studied this question.
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