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The electrochemical performance of a thick Ge film (ca. 1020 nm) is dramatically improved by adopting vertically aligned carbon nanotube (VACNT) arrays as a 3D current collector. The VACNT-supported thick Ge film exhibits high reversible specific capacity (1352 mAh g(-1) ), and excellent capacity retention (97.2% after 100 cycles) and rate capability (843 mAh g(-1) at 10 C).
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Wang et al. (2014) studied this question.
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