Impact of External Magnetic Fields on STT-MRAM: An Application Note

B. Diény; S. Aggarwal; V. B. Naik; Sébastien Couet; Thomas Coughlin; Shunsuke Fukami; Kévin Garello; Jack Guedj; Jean Anne C. Incorvia; Laurent Lebrun; Kyung‐Jin Lee; Daniele Leonelli; Yonghwan Noh; Siamak Salimy; Steven Soss; L. Thomas; Weigang Wang; D. C. Worledge

doi:10.1109/med.2024.3442086

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Abstract

This application note discusses the working principle of spin-transfer torque magnetoresistive random access memory (STT-MRAM) and the impact that magnetic fields can have on STT-MRAM operation. Sources of magnetic fields and the typical magnitudes of magnetic fields are given.

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synapsesocial.com/papers/6aa91651262dd5f9576c0060 https://doi.org/10.1109/med.2024.3442086

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Impact of External Magnetic Fields on STT-MRAM: An Application Note

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Impact of External Magnetic Fields on STT-MRAM: An Application Note

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