Dominant ultraviolet electroluminescence from p-ZnO:As/n-SiC(6H) heterojunction light-emitting diodes

Ultraviolet electroluminescence was demonstrated from a p-ZnO:As/n-SiC(6H) heterojunction light-emitting diode at room-temperature. The p-ZnO:As was fabricated by out-diffusion of arsenic atoms from a sandwiched GaAs interlayer on SiC substrate. The p-type doping was confirmed by both Hall and low-temperature photoluminescence measurements. Under forward bias, an intense ultraviolet emission centered at 384 nm was achieved from ZnO side of the diode. Furthermore, the light-output-current characteristic was determined to evaluate the high-efficiency electroluminescence performance of the diode.