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August 8, 2022IEEE Transactions on Electron Devices

High-Performance Normally-Off Operation p-GaN Gate HEMT on Free-Standing GaN Substrate

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Authors

HWHsiang-Chun WangTPTaofei PuXLXiaobo Li

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Wang et al. (2022) studied this question.

synapsesocial.com/papers/6aa91a5e63d77f9f8656c110https://doi.org/10.1109/ted.2022.3193991
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