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January 20, 2016IEEE Transactions on Electron DevicesOpen Access

Performance Optimization of Au-Free Lateral AlGaN/GaN Schottky Barrier Diode With Gated Edge Termination on 200-mm Silicon Substrate

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Authors

JHJie HuImec the NetherlandsSSSteve StoffelsPhilips (United States)SLSilvia LenciIMEC

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Hu et al. (2016) studied this question.

synapsesocial.com/papers/6aa4045ba45983801221ce7fhttps://doi.org/10.1109/ted.2016.2515566
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