Low-resistivity, high-transmittance Ga:ZnO films prepared through metalorganic chemical vapor deposition using an inexpensive solution of diethylzinc in n-hexane as the Zn precursor

In this study, we prepared Ga-doped ZnO (GZO) films with qualified opto-electric properties through chemical vapor deposition of an inexpensive solution of diethylzinc in n-hexane (ca. 17 wt. %). The GZO films exhibited low resistivity (3.61 × 10−4 Ω cm) and high transmittance (85%) in the visible range. Interestingly, post-annealing treatment of the GZO films under N2 at 525 °C for just 10 min increased the number of carbon-interstitial oxygen defects (CZn + 2Oi)″, which played the role of acceptors and enhanced the film properties significantly. This approach potentially allows the fabrication of inexpensive transparent conducting oxides for use in solar cells.