Quantitative features of the enhancement effect by electron beam irradiation on the dislocation glide in III-V compounds (n-GaAs, n-InP) are surveyed. The effect is explained in terms of the enhanced kink migration in the Peierls mechanism with an assist of the energy released by the non-radiative recombination of the injected carriers at the localized level associated with the dislocation.
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Maeda et al. (1983) studied this question.