A glass-supported, backside-illuminated AlGaAs/GaAs heterojunction charge-coupled device (CCD) imager is reported. The CCD structure was grown by liquid phase epitaxy on a GaAs substrate. The top epi-layer was bonded to glass and the GaAs substrate completely removed. A ten-pixel three-phase Schottky gate CCD was fabricated on the glass-supported layer. The CCD was successfully operated as a line imager with the photosignal entering through the support glass.
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Liu et al. (1980) studied this question.
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