Antisite defect-free Lu3(GaxAl1−x)5O12:Pr scintillator

This is the authors' abstract. We don't add key points for this paper.

Pr-doped Lu3(GaxAl1−x)5O12:Pr, x=0–1, single crystals were grown by the micro-pulling-down method. We study luminescence and scintillation characteristics of the sample set focusing on their dependence on the gallium content. For x=0.4 we obtain the high figure-of-merit material with elevated density, high efficiency, and very fast scintillation response below 20ns without any slower components. Improvement of scintillation performance is explained as due to the absence of the antisite LuAl defects that was for the first time realized in such bulk garnet single crystals grown from the high temperature melt.