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September 27, 2013Journal of Micromechanics and Microengineering

Improving aluminum nitride plasma etch process for MEMS applications

Vladimir Bliznetsov Badrul Hisam Bin Johari M.T. Chentir Wei Hong Li Lai Yin Wong Srinivas Merugu Xiao Lin Zhang Navab Singh

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Abstract

Improving aluminum nitride plasma etch process for MEMS applications, Bliznetsov, Vladimir, Johari, Badrul Hisam Bin, Chentir, Mohamed Tahar, Li, Wei Hong, Wong, Lai Yin, Merugu, Srinivas, Zhang, Xiao Lin, Singh, Navab

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Bliznetsov et al. (2013) studied this question.

synapsesocial.com/papers/6aa92f761ed6af7fb80e0631 https://doi.org/10.1088/0960-1317/23/11/117001

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Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1Integrated aluminum nitride piezoelectric microelectromechanical system for radio front endsOriginal Research · 2009 · 35 citations
2Microstructure and chemical wet etching characteristics of AlN films deposited by ac reactive magnetron sputteringOriginal Research · 2009 · 29 citations
3Influence of crystallographic orientation on dry etch properties of TiNOriginal Research · 2006 · 15 citations
4Selective inductively coupled plasma etching of group-III nitrides in Cl2- and BCl3-based plasmasOriginal Research · 1998 · 64 citations
5Evolution of surface roughness of AlN and GaN induced by inductively coupled Cl2/Ar plasma etchingOriginal Research · 2004 · 58 citations

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