In this paper, the performance of P-on-n double-layer heterojunction (DLHJ) HgCdTe photodiodes at temperature 77 K is analyzed theoretically. Calculation has been performed for the backside-illuminated configuration. The effect of photodiode base layer geometry on quantum efficiency and R/sub o/A product is analyzed. Also, the effect of lateral collection of diffusion current and photocurrent on photodiode parameters has been shown. Moreover the dependence of the p-n junction position within heterostructure on the band-gap energy profiles and photodiode performance is presented. Finally, the influence of the composition gradient and p-side doping concentration on photodiode parameters is described briefly.
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Wenus et al. (2001) studied this question.
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