This paper presents results from the self-consistent solution of Schrodinger and Poisson equations obtained in one-dimensional (1-D) nonuniformly doped MOS structures suitable for the fabrication of very short transistors. Different issues are considered and investigated, including quantum-induced threshold voltage shifts, low-field electron effective mobility and gate-to-channel capacitance. The reported results give indications for the optimization of n-MOS channel doping profiles suitable for the fabrication of ultrashort MOSFETs.
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Fiegna et al. (1998) studied this question.
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