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January 1, 1997IEEE Transactions on Electron Devices

Electron and hole quantization and their impact on deep submicron silicon p- and n-MOSFET characteristics

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SJS. JallepalliON Semiconductor (United States)JBJ. BudeLawrence Livermore National LaboratoryWSW.-K. Shih

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Jallepalli et al. (1997) studied this question.

synapsesocial.com/papers/6a8b8e4ff71b672e3df4820fhttps://doi.org/10.1109/16.557719
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