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This paper reports on advanced metalorganic chemical vapor deposition (MOCVD) grown HgCdTe barrier photodiodes for long wave infrared (LWIR) application. The n + p + B p π N + device is a concept of a specific barrier bandgap architecture integrated with Auger-suppression as a good solution for high operating temperature (HOT) infrared detectors with high detectivity and sub-nanosecond time constant. The design approach, growth aspects and detector characterization of HgCdTe n + p + B p π N + barrier photodiodes operated with thermoelectric cooling (230 K) have been discussed in the paper. The influence of absorber thickness on the device’s properties has been analyzed in the experiment.
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Kopytko et al. (2016) studied this question.
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