Magnetic tunnel junctions (MTJs) with half-metallic electrodes are expected to show a large tunnel magnetoresistance (TMR) ratio, according to Julliere's model. A Co 2 MnSi Heusler alloy is theoretically expected to possess a half-metallic electronic state. Experimentally, at low temperature, Co 2 MnSi(100)/Al-oxide/CoFe junctions exhibited a large TMR ratio. We fabricated MTJs with high-quality (110)-oriented Co 2 MnSi electrodes and investigated the TMR effects. We obtained a TMR ratio of about 40% at room temperature and 120% at 2 K, respectively. However, we observed degradation of the energy gap of Co 2 MnSi in the minority spin band from the conductance–voltage characteristics. We infer that the interface of Co 2 MnSi(110) possesses no half-metallic property.
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Hattori et al. (2008) studied this question.
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