Circuit analysis demonstrates mutual threshold voltage self-compensation in amorphous silicon thin-film circuits, highlighting intrinsic stabilization methods for disordered semiconductors.
Thin-film transistors (TFTs) based on disordered semiconductors such as amorphous hydrogenated silicon (a-Si:H) experience a threshold voltage (VT) shift with time in the presence of a gate bias. The VT shift needs to be compensated for circuit applications. We study an interesting property of self-compensation in fundamental analog TFT circuits with one a part of the circuit compensating for the effects of VT shift in the other and vice versa.
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Sambandan et al. (2008) studied this question.
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