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The authors report on the experimental method to measure the current spreading length in GaN-based light emitting diodes (LEDs) based on a one-dimensional current-distribution model neglecting vertical series resistance of the LEDs. It is clearly shown that the measured current spreading length is in good agreement with the calculated results, exhibiting a strong dependence on the injected current density (or forward bias voltage). LEDs fabricated with hybrid p-type reflectors by using the proposed design rule and measured current spreading lengths show enhancement of the output power by 10% as compared to LEDs made with standard reflectors.
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Kim et al. (2007) studied this question.
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