Electrical Properties of Melt-Epitaxy-Grown InAs0.04Sb0.96 Layers with Cutoff Wavelength of 12 µm

A study of the electrical properties of melt epitaxy (ME)-grown InAs0.04Sb0.96/InAs epilayers with a cutoff wavelength of 12 µm was performed. From the measured temperature dependence of the electrical properties, a peak electron mobility of 100,000 cm2/V·s with a carrier density of 1×1015 cm-3 at 200 K, and an electron mobility of 60000 cm2/V·s with a carrier density of 2.3×1016 cm-3 at 300 K have been obtained for the first time. The different behaviors of the electrical properties were observed for samples grown using graphite and fused-silicon boats, and were analyzed in terms of their scattering mechanism. The results showed that ionized impurity scattering is the dominant process at low temperatures for all the samples. Polar optical phonon scattering governs electron mobility at high temperature. C contamination has significant influence on the electron mobility below 200 K for the sample grown using a graphite boat.