13-nm extreme ultraviolet lithography

The National Technology Roadmap for Semiconductors projects the need for 0.1 micron lithography for leading-edge IC production, beginning in the year 2007. Reduction imaging using extreme ultraviolet light, one-to-one printing using X-rays, and advanced electron beam technologies are the front runners for use at this design rule. This paper describes research and development activities for projection printing using extreme ultraviolet lithography (EUVL). This approach, known as NX EUV, is the logical extension of optical projection lithography and offers many of its advantages, including robust mask technology and reduction printing while maintaining a large depth of focus (DOF) at modest K-factor. The development of this technology is now in the research and development phase. This paper reviews its current status and describes the building blocks of a generic EUVL tool.>