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December 10, 2015Applied Physics Express

Evaluation of write error rate for voltage-driven dynamic magnetization switching in magnetic tunnel junctions with perpendicular magnetization

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Authors

YSYoichi ShiotaKyoto UniversityTNTakayuki NozakiNational Institute of Advanced Industrial Science and TechnologySTShingo TamaruNational Kyushu Medical Center

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Shiota et al. (2015) studied this question.

synapsesocial.com/papers/6aa95c19e4c74ea018879f54https://doi.org/10.7567/apex.9.013001
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