Self-Selective Characteristics of Nanoscale VOₓ Devices for High-Density ReRAM Applications

We herein present a hybrid-type memory device in which threshold switching and bipolar resistive switching are combined. The nanoscale vanadium oxide(VOₓ)device simultaneously exhibited self-selective performance and memory switching by electroforming. By using W instead of Pt for the top electrode, memory performance was improved in terms of cycling, pulse endurance, and retention properties attributed to a self-formedWOₓ/VOₓinterface. Such a phenomenon in a simple metal–oxide–metal structure provides a good potential for future high-density cross-point memory devices by avoiding the sneak-path problem.