High Performance MoTe2/SnSe2 Heterostructure Photodiode for Near-Infrared Photodetection

Near-infrared (NIR) photodetection is required for modern imaging applications such as digital cameras, environmental monitoring, and medical diagnostics.Silicon-based photodiodes can detect light with a wavelength of up to 1,000 nm while InGaAs-based photodiodes that can detect NIR light are expensive to fabricate.Two-dimensional semiconductors have shown excellent electrical and optical properties.Showing high absorption coefficients and high carrier mobility, they are attracting attention as future optoelectronic devices.MoTe 2 has an energy band gap of 0.9 eV in a few-layer configuration and can absorb wavelength of 1,300 nm, and thus has high potential as a photodetector in the NIR region.SnSe 2 meanwhile has very high conductivity and excellent electrical properties.In this study, we fabricated a MoTe 2 /SnSe 2 heterojunction photodiode and reported its electrical and optical properties.In addition, we extracted the potential barrier of the MoTe 2 /SnSe 2 heterojunction from the temperature dependent I-V curve.