Strain-induced band engineering in monolayer stanene on Sb(111)

The two-dimensional (2D) allotrope of tin with low buckled honeycomb structure named stanene is proposed to be an ideal 2D topological insulator with a nontrivial gap larger than 0.1 eV. Theoretical works also pointed out the topological property of stanene amenability to strain tuning. In this paper we report the successful realization of high quality, monolayer stanene film as well as monolayer stanene nanoribbons on Sb(111) surface by molecular-beam epitaxy, providing an ideal platform to the study of stanene. More importantly, we observed a continuous evolution of the electronic bands of stanene across the nanoribbon, related to the strain field gradient in stanene. Our work experimentally confirmed that strain is an effective method for band engineering in stanene, which is important for fundamental research and application of stanene.