High-Temperature Tunneling Quantum-Dot Intersublevel Detectors for Mid-Infrared to Terahertz Frequencies

Quantum-dot infrared photodetectors have emerged as attractive devices for sensing long wavelength radiation. Their principle of operation is based on absorption of radiation via intersublevel transitions in quantum dots. Multiple layers of self-organized In(Ga)As/Ga(Al)As quantum dots are generally incorporated in the active region of these devices. Three-dimensional quantum confinement allows normal incidence operation. This paper describes a novel variation in the design of these devices which allows a significant reduction of the dark current, high temperature operation and extension of operation to terahertz frequencies. The principle of operation and operating characteristics of this device—the tunnel quantum-dot intersublevel detector—are described. Operation is demonstrated from 6–80μmat temperatures up to 300 K with acceptable values of peak responsivity (0.1–0.75 A/W) and specific detectivity (10⁷–10¹¹\ cm· Hz1/2/ W⁻¹, depending on temperature and wavelength).