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Using modelling, we have examined alternative designs of light‐emitting diode (LED) structures, aimed at lowering the non‐equilibrium carrier concentration and, hence, at suppression of Auger recombination in the active regions of the diodes. Both a multi‐quantum‐well (MQW) heterostructure and that with a thick single active layer are compared. The MQW structure is found to be ineffective for improvement of the LED internal quantum efficiency (IQE). In contrast, LEDs with a thick single active layer turn out to be quite promising for high‐current operation. Detailed simulation provides a guideline for further optimization of the LED heterostructures. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Bulashevich et al. (2009) studied this question.
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