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Mathematical modeling demonstrates thermophysical field shifts in an infinite semiconductor medium under mechanical loads, highlighting the impact of load inclination and relaxation time.
This article deals with the semiconductor medium under consideration generalized photo-thermoelasticity-relaxation model. The medium is subjected to a linearly distributed force influenced by carrier diffusion coefficient and thermally activated coupling parameter. Both Laplace and Fourier transform techniques as well as the Helmholtz equations are applied to get a system in one variable only. Closed-form solutions are made to get all field quantities in terms of some parameters. Such parameters are specified by applying the boundary conditions. Then the inverse transformations are applied to get field quantities in the time and spatial coordinates. The numerical results for the thermophysical fields have been graphically presented. Comparisons between the outcomes are made to examine the influence of both relaxation time and the inclination angle.
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Hafed et al. (2025) studied this question.
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