We propose a cross-linking technique as a new approach to reducing the line-edge roughness (LER) of resist patterns. In addition, we also develop a cross-linked positive-tone resist called the suppressed aggregate extraction development (SAGEX) resist, based on this technique. Our key approach to reducing the LER is the suppression of the aggregate extraction development, which causes LER. We demonstrate successful suppression of the aggregate extraction development by cross-linking polymers in the surrounding regions and by reducing the difference between dissolution rates inside and outside the aggregates, and clarify that the LER of the resist patterns in the SAGEX resist is reduced.
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Yamaguchi et al. (1999) studied this question.
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