Time- and locally resolved photoluminescence of semipolar GaInN∕GaN facet light emitting diodes

The authors investigate the carrier lifetime and photoluminescence (PL) intensity of a semipolar GaInN∕GaN sample which was realized by growing five GaInN∕GaN quantum wells on the {11¯01} side facets of selectively grown n-GaN stripes that have a triangular shape running along the ⟨112¯0⟩ direction. Time- and locally resolved PL measurements show drastically reduced lifetimes for the semipolar sample of only 650ps at 4K whereas lifetimes exceeding 50ns were found for a polar reference sample. Furthermore, more than a doubling of the luminescence intensity and a significantly reduced blueshift of the PL peak wavelength with increasing excitation power density provide further evidence for the presence of reduced piezoelectric fields in the semipolar sample.