We developed a new liquid phase epitaxy (LPE) growth method for growing large GaN single crystals. In this method, the homo-epitaxial growth of the GaN crystal proceeds by nitrogen dissolution against a Na-Ga solution film coating the GaN thin-film substrate. A growth rate of 4 µm/h was achieved though nitrogen pressure was relatively low at 9.5 atm. Furthermore, the GaN film grown by this method showed a flat surface.
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Kawamura et al. (2003) studied this question.
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