In this paper, a microstrip patch antenna is fabricated directly onto a high-resistivity silicon substrate without an insulating barrier, thereby forming a distributed Schottky diode between the patch radiator metallization and ground plane. By applying d.c. bias control to the patch metallization, direct amplitude modulation of a CW microwave carrier can be achieved. Experimental results are presented that show the far-field radiation characteristics of the structure and its response to applied base-band modulation signals. Also direct base-band signal detection using the patch antenna is discussed.
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Fusco et al. (1999) studied this question.
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