We present a theoretical treatment of the effect of stress on dopant and defect diffusion in Si. A prior treatment [P. H. Dederichs and K. Schroeder, Phys. Rev. B $17,$ 2524 (1978)] of vacancy diffusion in strained fcc metals is extended to include more general defects and crystallinity. The new method is applied to two examples in Si: (1) a vacancy, including Jahn-Teller distortions, and (2) a B-I pair. Both are predicted to show isotropic diffusion for (100) grown uniaxially strained film, but strong anisotropic diffusion for (111) films.
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Daw et al. (2001) studied this question.
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