Magnetic tunneling junction based magnetic field sensors: Role of shape anisotropy versus free layer thickness

Al2O3- and MgO-based magnetic tunnel junction (MTJ) sensors were designed and fabricated using microfabrication techniques. This study revealed that in the case of Al2O3-based sensors, the shape anisotropy in the free NiFe electrode resulted in a linear and hysteresis-free tunneling magnetoresistance (TMR) curve. These sensors exhibited TMR values between 27% and 30% and sensitivity up to 0.4%/Oe over a magnetic field range of − 40 to 40 Oe. In the case of CoFeB/MgO/CoFeB MTJ sensors, shape anisotropy alone was not sufficient to achieve a linear and hysteresis-free MR response. A superparamagnetic free layer was used to achieve the desired sensor response. MgO-based sensors had about 90% TMR and 1.1%/Oe sensitivity over the same field range as Al2O3-based MTJs.