Effect of Deuterium Anneal on SiO2/Si(100) Interface Traps and Electron Spin Resonance Signals of Ultrathin SiO2 Films

Anneal kinetics of the SiO2/Si(100) interface defects of 5-nm-thick SiO2 films have been investigated through comparison of the electron spin resonance (ESR) center with the interface trap density D i t . The ESR signal showed two distinct defects (so-called Pb0 and Pb1) at the SiO2/Si(100) interface: These Pb0 and Pb1 defects are annihilated by a low-temperature (500°C) deuterium (D2) anneal. By contrast, the D2 anneal at 900°C causes an increase in the number of the defects after a decrease at the initial stage (< 10 s). We conclude that there are annihilation and dissociation processes causing the Pb0 and Pb1 defects, dependent on the D2 anneal time and temperature.