Low frequency noise has been measured in magnetic tunnel junctions with MgO barriers and magnetoresistance values up to 235%. The authors investigated the noise for different degrees of crystallization and CoFeB∕MgO interface quality depending on the annealing temperature. The authors report an extremely low 1∕f noise, compared to magnetic junctions with Al2O3 barriers. The origin of the low frequency noise is discussed and it is attributed to localized charge traps with the MgO barriers.
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Scola et al. (2007) studied this question.