Dependence of the Switching Characteristics of Resistance Random Access Memory on the Type of Transition Metal Oxide; TiO2, ZrO2, and HfO2 , Gee Kim, Wan, Gyu Sung, Min, Joo Kim, Sook, Hee Yoo, Jong, One Youn, Te, Won Oh, Jang, Nam Kim, Jung, Gu Gyun, Byung, Wan Kim, Taeh, Ho Kim, Chi, Young Byun, Jun, Kim, Won, Sig Joo, Moon, Sung Roh, Jae, Ki Park, Sung
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Kim et al. (2011) studied this question.
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