Metal/thin insulator/silicon schottky diodes with plasma deposited silicon nitride interfacial layer

The electrical characteristics of Schottky diodes with thin plasma deposited silicon nitride interfacial layers, using W and Ti on both, p- and n-t ype substrates and Ni on n-t ype substrates are investigated. For the first time Schottky MIS diodes with remote plasma deposited silicon nitride interfacial layer are reported. The Schottky barrier value change vs. nitride thicknesses is explained to be due to the reduction of the metal-s emiconductor interaction and passivation of surface states.