Ultra-fast recovery transients in GaN MIS-HEMT submitted to OFF-state stress

This is the authors' abstract. We don't add key points for this paper.

We investigate the degradation induced by an OFF state stress condition in normally-on (NON) MIS-HEMTs for power applications. The state of the devices was tracked by considering the shift in the threshold voltage value over time during the stress and the following recovery phase by means of a custom setup. During the transition between stress and recovery, we observed an immediate partial recovery of the V TH (70 %) that occurs in <10 μs, while the remaining V TH is recovered in about 100 s. With a dedicated analysis, we managed to investigate this ultra-fast recovery transient for the first time, and we observed that the recombination of electrons from 2DEG with ionized donors is responsible for this dynamic.