We report the direct observation of the transition from type I to type II in (GaAs)ₘ/(AlAs)ₙ ultra-short-period superlattices with m=n by means of photoacoustic spectroscopy and high-excitation-intensity photoluminescence. The transition is found to occur when the constituent superlattice layers have a critical thickness of about 12 monolayers (m=n=12). Different temperature dependences of the type-I and type-II recombinations are observed, which are tentatively ascribed to the thermal transfer of the carriers between quantized subbands, in different critical points of the superlattice.
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Cingolani et al. (1989) studied this question.
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