Femtosecond laser‐assisted formation of channels in sapphire using KOH solution

We report on wet etching of photomodified regions in crystalline sapphire using KOH solution. Tightly focused femtosecond laser pulses (150 fs at 800 nm wavelength) were used to create void structures enclosed in an amorphised sapphire shell inside the bulk of a crystalline host. The diameter of the amorphous regions can be controlled by pulse energy and was typically 0.5–1.5 µm. The etching rate depends on the distance between adjacent irradiation spots, pulse energy, concentration of etchant and ultrasonic agitation. magnified image Amorphised sapphire is etched out in KOH solution. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)