What question did this study set out to answer?

To measure dislocation velocities in III-V semiconductor compounds and assess the influence of crystal polarity, defect geometry, and donor impurities on dislocation mobility.

June 1, 1979Le Journal de Physique ColloquesOpen Access

Velocities and Internal Friction of Dislocations in Iii-v Compounds

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Authors

TNT. NinomiyaKawasaki Medical School

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Implication

Experimental study reveals differential dislocation velocities in III-V compounds, indicating that 30° β-dislocations exhibit the lowest mobility in n-type crystals.

Key Points

To measure dislocation velocities in III-V semiconductor compounds and assess the influence of crystal polarity, defect geometry, and donor impurities on dislocation mobility.
Performed direct velocity measurements across distinct dislocation types, including α-dislocations, β-dislocations, and screw dislocations, in III-V compound crystals.
Analyzed the effects of donor impurity doping on defect kinetics in n-type crystal matrices.
Direct measurements showed β-dislocation velocity is strongly suppressed by donor impurities and is significantly slower than α-dislocation velocity.
Comparative analysis against screw dislocation velocities demonstrated that the 30° β-dislocation exhibits the lowest mobility in n-type crystals.

Cite This Study

T. Ninomiya (1979) studied this question.

synapsesocial.com/papers/6aaa49fc0d3342aa3754c4e5 https://doi.org/10.1051/jphyscol:1979629

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Implication

Experimental study reveals differential dislocation velocities in III-V compounds, indicating that 30° β-dislocations exhibit the lowest mobility in n-type crystals.

Velocities and Internal Friction of Dislocations in Iii-v Compounds

Discussion

Member takes

Implication

Key Points

Cite This Study

Velocities and Internal Friction of Dislocations in Iii-v Compounds

Discussion

Member takes

Implication

Key Points

Cite This Study

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