Debye temperature of 4 H -SiC determined by X-ray powder diffraction

Crystal structure of 4 H -SiC was refined from room-temperature X-ray powder diffraction data using the Rietveld refinement method. The refined lattice constants were determined to be a = b =3.079 93(0) Å, c =10.082 22(2) Å, and the refined overall temperature factor B =0.383(3) Å 2 . Using the Debye approximation, the Debye temperature was successfully determined to be 1194.8 K.