Design of optical memory elements based on n-type organic field-effect transistors comprising a light-sensitive spirooxazine layer

The design of high-speed optical memory elements based on organic field-effect transistors comprising [60]fullerene as an n-type semiconductor and 1,3-dihydro-1,3,3-trimethylspiro(2H-indole-2,3’-[3H]naphth[2,1-b][1,4]oxazine) as a light-sensitive component placed at the interface with an aluminum oxide gate dielectric has been developed. The memory elements exhibit a switching coefficient of ∼104 and a minimal programming time of 0.5–1.5 ms.