The impact of the quasi-Fermi potential gradient on transconductance enhancement at low temperatures is studied for silicon NMOSFETs. Using experimental measurements and two-dimensional numerical simulations, it is shown that the influence of this gradient on transconductance becomes significant in the deep submicrometre range. This effect is explained in terms of reduction of the intrinsic channel length and moving of the Fermi level closer to the band edge at low temperatures.
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Szelag et al. (1998) studied this question.
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